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| Place of Origin | China |
| Brand Name | MITSCN |
| Certification | ISO |
RS8-595_605MBG(210-120 bifacial module with dual glass)
Suitable for ground power plants and distributed projects
Advanced module technology delivers superior module efficiency
·Gallium-doped Wafer·Non destructive cutting ·MBB half-cut
Excellent power generation performance
·Excellent IAM and Weak light response ·Low temperature ratings ·0.45% linear Power decline
High module quality ensures long-term reliability
· Strict selected material ·Advanced technology ·Leading standard
| Electrical Characteristics STC | RS9-650M-E1 | RS9-655M-E1 | RS9-660M-E1 | RS9-665M-E1 | RS9-670M-E1 |
| Maximum Power (Pmax) | 650W | 655W | 660W | 665W | 670W |
| Power Tolerance | 0~+5W | 0~+5W | 0~+5W | 0~+5W | 0~+5W |
| ciency |
20.92% | 21.09% | 21.25% | 21.41% | 21.57% |
| Maximum Power Current (lmp) | 17.39A | 17.43A | 17.47A | 17.51A | 17.55A |
| Maximum Power Voltage (Vmp) | 37.40V | 37.60V | 37.80V | 38.00V | 38.20V |
| Short Circuit Current (lsc) | 18.44A | 18.48A | 18.53A | 18.57A | 18.62A |
| Open Circuit Voltage (Voc) | 45.30V | 45.5V | 45.70V | 45.90V | 46.10V |
| Values at Standard Test Conditions STC(AM1.5, Irradiance 1000W/m, Cell Temperature 25°C) | |||||
| Electrical Characteristics NOCT | RS9-650M-E1 | RS9-655M-E1 | RS9-660M-E1 | RS9-665M-E1 | RS9-670M-E1 |
| Maximum Power (Pmax) | 492W | 496W | 500W | 504W | 508W |
| Maximum Power Current (lmp) | 14.09A | 14.13A | 14.17A | 14.22A | 14.26A |
| Maximum Power Voltage (Vmp) | 34.90V | 35.10V | 35.30V | 35.40V | 35.60V |
| Short Circuit Current (lsc) | 14.86A | 14.89A | 14.93A | 14.96A | 15.01A |
| Open Circuit Voltage (Voc) | 42.70V | 42.90V | 43.00V | 43.20V | 43.40V |
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