RS6-555-575N N-type (182-144 mono-facial module)
Suitable for ground power plants and distributed projects
Advanced module technology delivers superior module efficiency
·Gallium-doped Wafer·Non destructive cutting ·MBB half-cut
Excellent power generation performance
·Excellent IAM and Weak light response ·Low temperature ratings ·0.40% linear Power decline
High module quality ensures long-term reliability
·Strict selected material ·Advanced technology ·Leading standard
Ultra-hydrophilic self-cleaning coating techniques
Electrical Characteristics STC | RS6-555N-E3 | RS6-560N-E3 | RS6-565N-E3 | RS6-570N-E3 | RS6-575N-E3 |
Maximum Power (Pmax) | 555W | 560W | 565W | 570W | 575W |
Power Tolerance | 0~+5W | 0~+5W | 0~+5W | 0~+5W | 0~+5W |
21.48% | 21.68% | 21.87% | 22.07% | 22.26% | |
Maximum Power Current (Imp) | 13.16A | 13.21A | 13.27A | 13.32A | 13.38A |
Maximum Power Voltage (Vmp) | 42.20V | 42.40V | 42.60V | 42.80V | 43.00V |
Short Circuit Current (Isc) | 13.93A | 13.99A | 14.05A | 14.11A | 14.17A |
Open Circuit Voltage (Voc) | 50.40V | 50.60V | 50.80V | 51.00V | 51.20V |
Values at Standard Test Conditions STC(AM1.5, Irradiance 1000W/m2, Cell Temperature 25°C) | |||||
Electerical Characteristics NOCT | RS6-555N-E3 | RS6-560N-E3 | RS6-565N-E3 | RS6-570N-E3 | RS6-575N-E3 |
Maximum Power (Pmax) | 421W | 424W | 428W | 432W | 436W |
Maximum Power Current (Imp) | 10.61A | 10.65A | 10.70A | 10.74A | 10.79A |
Maximum Power Voltage (Vmp) | 39.60V | 39.80V | 40.00V | 40.20V | 40.40V |
Short Circuit Current (Isc) | 11.23A | 11.28A | 11.33A | 11.38A | 11.42A |
Open Circuit Voltage (Voc) | 48.20V | 48.40V | 48.60V | 48.70V | 48.90V |
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