HJT 2.0 Technology
Combining gettering process and single-side uc-Si technology to ensure higher cell efficiency and higher module power.
0.26%/ °C Pmax temperature coefficient
More stable power generation performance and even better inhot climate.
SMBB design with Half-Cut Technology
Shorter current transmission distance, less resistive loss andhigher cell efficiency.
Up to 90% Bifaciality
Natrual symmetrical bifacial structure bringing more energyyield from the backside.
Sealing with PIB based sealant
Stronger water resistance, greater air impermeability to extentmodule lifespan.
Higher reliability
Industrial leading product and performance warranty, ensuringmodules' consistent outstanding performance.
Suitable for Utility project
Lower BOS cost, lower LCOE
Mechanical Characteristics | |
Cell Type | HJT Mono 210*105mm |
Cell Connection | 120 (6*20) |
Frame | Anodized Aluminum Alloy |
Junction Box | IP68 |
Weight | 35.3kg |
Dimensions | 2172*1303*35mm |
Output Cable | 4mm2(EU),300mm in length,length can be customized |
Packing Information | |
Container | 40’HC |
Pallets per Container | 18 |
Pieces per Container | 558 |
Values at Standard Test Conditions STC(AM1.5, Irradiance 1000W/m², Cell Temperature25°C)
Electrical characteristics STC | DS625 | DS630 | DS635 | DS640 | DS645 |
Maximum Power(Pmax) | 625W | 630W | 635W | 640W | 645W |
Power Tolerance | 0~+5W | 0~+5W | 0~+5W | 0~+5W | 0~+5W |
Module Efficiency | 22.08% | 22.26% | 22.44% | 22.61% | 22.79% |
Optimum Operating Current(Imp) | 16.51A | 16.57A | 16.63A | 16.69A | 16.75A |
Optimum Operating Voltage(Vmp) | 37.86V | 38.03V | 38.19V | 38.35V | 38.51V |
Short Circuit Current(Isc) | 17.31A | 17.37A | 17.43A | 17.49A | 17.55A |
Open Circuit Voltage(Voc) | 45.13V | 45.30V | 45.48V | 45.65V | 45.82V |
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